Infineon Technologies AUIRGP35B60PD-E

SKU: AUIRGP35B60PD-E-9

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Manufacturer Part :
AUIRGP35B60PD-E
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
RoHS Compliant
AUIRGP35B60PD-E Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 22A, 3.3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2011

Part Status

Obsolete

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

HIGH RELIABILITY

Max Power Dissipation

308W

Rise Time-Max

11ns

Element Configuration

Single

Power Dissipation

308W

Case Connection

COLLECTOR

Mount

Through Hole

Factory Lead Time

14 Weeks

Td (on/off) @ 25°C

26ns/110ns

Switching Energy

220μJ (on), 215μJ (off)

Max Collector Current

60A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-247AD

Turn On Time

34 ns

Vce(on) (Max) @ Vge, Ic

2.55V @ 15V, 35A

Turn Off Time-Nom (toff)

142 ns

IGBT Type

NPT

Gate Charge

55nC

Current - Collector Pulsed (Icm)

120A

Polarity/Channel Type

N-CHANNEL

Transistor Application

POWER CONTROL

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

16ns

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Collector Emitter Voltage (VCEO)

2.55V

Lead Free

Lead Free

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