ON Semiconductor FGL35N120FTDTU

SKU: FGL35N120FTDTU-9

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Manufacturer Part :
FGL35N120FTDTU
Manufacturer :
ON Semiconductor
Package :
TO-264-3, TO-264AA
RoHS :
ROHS3 Compliant
FGL35N120FTDTU Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2013

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Number of Pins

3

Weight

6.756g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 35A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Max Power Dissipation

368W

Mount

Through Hole

Factory Lead Time

4 Weeks

Current - Collector Pulsed (Icm)

105A

Power - Max

368W

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

70A

Reverse Recovery Time

337 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 35A

IGBT Type

Trench Field Stop

Gate Charge

210nC

Td (on/off) @ 25°C

34ns/172ns

Switching Energy

2.5mJ (on), 1.7mJ (off)

Input Type

Standard

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Height

26.4mm

Length

20.2mm

Width

5.2mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Polarity/Channel Type

N-CHANNEL

Lead Free

Lead Free

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