IXYS IXGK28N140B3H1

SKU: IXGK28N140B3H1-9

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Manufacturer Part :
IXGK28N140B3H1
Manufacturer :
IXYS
Package :
TO-264-3, TO-264AA
RoHS :
RoHS Compliant
IXGK28N140B3H1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Published

2010

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Weight

10.000011g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.4kV

Number of Elements

1

Test Conditions

960V, 28A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

8 Weeks

Series

GenX3™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

Pin Count

3

Voltage - Collector Emitter Breakdown (Max)

1400V

Turn On Time

66 ns

Element Configuration

Single

Power Dissipation

300W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.4kV

Max Collector Current

60A

Reverse Recovery Time

350 ns

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 28A

Turn Off Time-Nom (toff)

915 ns

IGBT Type

PT

Gate Charge

88nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

16ns/190ns

Switching Energy

3.6mJ (on), 3.9mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

RoHS Compliant

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