IXYS IXXH30N60B3D1

SKU: IXXH30N60B3D1-9

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Manufacturer Part :
IXXH30N60B3D1
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IXXH30N60B3D1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Published

2013

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Packaging

Tube

Series

GenX3™, XPT™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

270W

Pin Count

3

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Mount

Through Hole

Factory Lead Time

28 Weeks

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 24A

Case Connection

COLLECTOR

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

25ns

JEDEC-95 Code

TO-247AD

Turn On Time

57 ns

Turn Off Time-Nom (toff)

292 ns

IGBT Type

PT

Power Dissipation

270W

Gate Charge

39nC

Current - Collector Pulsed (Icm)

115A

Td (on/off) @ 25°C

23ns/97ns

Switching Energy

550μJ (on), 500μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

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