Harris Corporation HGTG12N60C3DR

SKU: HGTG12N60C3DR-9

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Manufacturer Part :
HGTG12N60C3DR
Manufacturer :
Harris Corporation
Package :
TO-247-3
RoHS :
-
HGTG12N60C3DR Datasheet :
HGTG12N60C3DR

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Description

Specification

Processor

Manufacturer

Rochester Electronics LLC

Package Shape

RECTANGULAR

Package / Case

TO-247-3

Surface Mount

NO

Supplier Device Package

TO-247

Number of Terminals

3

Transistor Element Material

SILICON

Mfr

Harris Corporation

Number of Elements

1

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Product Status

Active

Operating Temperature

-55°C ~ 150°C (TJ)

JESD-609 Code

e0

Pbfree Code

No

Terminal Finish

TIN LEAD

Terminal Position

SINGLE

Terminal Form

THROUGH-HOLE

Package

Bulk

Reach Compliance Code

unknown

Current - Collector (Ic) (Max)

24 A

Test Condition

480V, 12A, 25Ohm, 15V

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

104 W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

600 V

JESD-30 Code

R-PSFM-T3

Qualification Status

COMMERCIAL

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 12A

Collector Current-Max (IC)

24 A

Collector-Emitter Voltage-Max

600 V

Gate Charge

71 nC

Current - Collector Pulsed (Icm)

48 A

Td (on/off) @ 25°C

37ns/120ns

Switching Energy

400μJ (on), 340μJ (off)

Reverse Recovery Time (trr)

37 ns

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