IXYS IXGR40N60CD1

SKU: IXGR40N60CD1-9

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Manufacturer Part :
IXGR40N60CD1
Manufacturer :
IXYS
Package :
ISOPLUS247™
RoHS :
RoHS Compliant
IXGR40N60CD1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

JESD-609 Code

e1

Package / Case

ISOPLUS247™

Number of Pins

247

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

480V, 40A, 4.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2004

Pin Count

3

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*40N60

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

60 ns

Qualification Status

Not Qualified

Case Connection

ISOLATED

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Reverse Recovery Time

3.5 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Turn Off Time-Nom (toff)

255 ns

JESD-30 Code

R-PSFM-T3

IGBT Type

PT

Gate Charge

116nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

25ns/100ns

Switching Energy

850μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

150ns

Element Configuration

Single

RoHS Status

RoHS Compliant

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