Infineon SIGC186T170R3EX1SA4

SKU: SIGC186T170R3EX1SA4-9

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Manufacturer Part :
SIGC186T170R3EX1SA4
Manufacturer :
Infineon
Package :
-
RoHS :
SIGC186T170R3EX1SA4 Datasheet :
SIGC186T170R3EX1SA4

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Description

Specification

Processor

Manufacturer

Infineon

PCB changed

3

Automotive

No

ECCN (US)

EAR99

EU RoHS

Compliant

Maximum Collector-Emitter Voltage (V)

1700

Maximum Continuous Collector Current (A)

150

Maximum Gate Emitter Leakage Current (uA)

0.6

Maximum Gate Emitter Voltage (V)

±20

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Package Height

0.19

Package Length

13.63

Package Width

13.63

Package Quantity

1

Supplier Package

Die

PPAP

No

Typical Collector Emitter Saturation Voltage (V)

2

Packaging

Wafer

Part Status

Active

Max Operating Temperature

150 °C

Min Operating Temperature

-55 °C

Pin Count

3

Configuration

Single

Drain to Source Voltage (Vdss)

1.7 kV

Collector Emitter Voltage (VCEO)

1.7 kV

Max Dual Supply Voltage

1.7 kV

Collector Emitter Saturation Voltage

2.4

Channel Type

N

Continuous Collector Current

150

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