Infineon Technologies IRGP30B60KD-EP

SKU: IRGP30B60KD-EP-9

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Manufacturer Part :
IRGP30B60KD-EP
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IRGP30B60KD-EP Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Turn Off Delay Time

185 ns

Power Dissipation

304W

Factory Lead Time

14 Weeks

Published

2004

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

304W

Current Rating

60A

Element Configuration

Single

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

237 ns

IGBT Type

NPT

Transistor Application

MOTOR CONTROL

Rise Time

28ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.35V

Max Collector Current

60A

Reverse Recovery Time

125 ns

JEDEC-95 Code

TO-247AD

Turn On Time

74 ns

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Input Type

Standard

Turn On Delay Time

46 ns

Gate Charge

102nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

46ns/185ns

Switching Energy

350μJ (on), 825μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

42ns

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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