IXYS IXGK50N60BD1

SKU: IXGK50N60BD1-9

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Manufacturer Part :
IXGK50N60BD1
Manufacturer :
IXYS
Package :
TO-264-3, TO-264AA
RoHS :
RoHS Compliant
IXGK50N60BD1 Datasheet :
IXGK50N60BD1

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Description

Specification

Processor

Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

TO-264-3, TO-264AA

Number of Pins

3

Weight

10.000011g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 50A, 2.7 Ω, 15V

Packaging

Tube

Published

2000

Operating Temperature

-55°C~150°C TJ

Series

HiPerFAST™

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

HIGH SPEED

Max Power Dissipation

300W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Mount

Through Hole

Reverse Recovery Time

50 ns

Turn On Time

110 ns

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

300W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Pin Count

3

Base Part Number

IXG*50N60

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Turn Off Time-Nom (toff)

375 ns

Gate Charge

110nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

50ns/200ns

Switching Energy

1.5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Qualification Status

Not Qualified

RoHS Status

RoHS Compliant

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