IXYS IXGT30N60B2D1

SKU: IXGT30N60B2D1-9

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Manufacturer Part :
IXGT30N60B2D1
Manufacturer :
IXYS
Package :
RoHS :
RoHS Compliant
IXGT30N60B2D1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Weight

4.500005g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 24A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

HiPerFAST™

JESD-609 Code

e3

Published

2004

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

190W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Surface Mount

Mount

Surface Mount

Max Collector Current

70A

Reverse Recovery Time

25 ns

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

190W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Pin Count

4

Base Part Number

IXG*30N60

Turn On Time

30 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 24A

Turn Off Time-Nom (toff)

350 ns

IGBT Type

PT

Gate Charge

66nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

13ns/110ns

Switching Energy

320μJ (off)

JESD-30 Code

R-PSSO-G2

RoHS Status

RoHS Compliant

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