IXYS IXBH42N170

SKU: IXBH42N170-9

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Manufacturer Part :
IXBH42N170
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IXBH42N170 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Series

BIMOSFET™

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.7kV

Number of Elements

1

Turn Off Delay Time

365 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2008

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

1.7kV

Max Power Dissipation

360W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Current Rating

75A

Mount

Through Hole

Factory Lead Time

17 Weeks

Reverse Recovery Time

1.32μs

Pin Count

3

Element Configuration

Single

Power Dissipation

360W

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

45 ns

Transistor Application

POWER CONTROL

Rise Time

35ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7kV

Max Collector Current

80A

Voltage - Collector Emitter Breakdown (Max)

1700V

Turn On Time

224 ns

Base Part Number

IXB*42N170

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 42A

Turn Off Time-Nom (toff)

1070 ns

Gate Charge

188nC

Current - Collector Pulsed (Icm)

300A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Height

21.46mm

Length

16.26mm

Width

5.3mm

RoHS Status

ROHS3 Compliant

Qualification Status

Not Qualified

Lead Free

Lead Free

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