Microsemi Corporation APT36GA60B

SKU: APT36GA60B-9

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Manufacturer Part :
APT36GA60B
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT36GA60B Datasheet :
APT36GA60B

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Pin Count

3

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 20A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

1999

Series

POWER MOS 8™

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

PURE MATTE TIN

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

290W

Mount

Through Hole

Factory Lead Time

29 Weeks

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Turn Off Time-Nom (toff)

262 ns

Input Type

Standard

Power - Max

290W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

65A

JEDEC-95 Code

TO-247AD

Turn On Time

29 ns

Element Configuration

Single

JESD-30 Code

R-PSFM-T3

IGBT Type

PT

Gate Charge

102nC

Current - Collector Pulsed (Icm)

109A

Td (on/off) @ 25°C

16ns/122ns

Switching Energy

307μJ (on), 254μJ (off)

Gate-Emitter Voltage-Max

30V

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

Case Connection

COLLECTOR

RoHS Status

RoHS Compliant

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