Microsemi Corporation APT65GP60B2G

SKU: APT65GP60B2G-9

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Manufacturer Part :
APT65GP60B2G
Manufacturer :
Microsemi Corporation
Package :
TO-247-3 Variant
RoHS :
RoHS Compliant
APT65GP60B2G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Published

1999

Package / Case

TO-247-3 Variant

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 65A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Voltage - Rated DC

600V

Packaging

Tube

Series

POWER MOS 7®

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN SILVER COPPER

Additional Feature

LOW CONDUCTION LOSS

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

84 ns

Current Rating

100A

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

100A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 65A

Turn Off Time-Nom (toff)

219 ns

Max Power Dissipation

833W

IGBT Type

PT

Gate Charge

210nC

Current - Collector Pulsed (Icm)

250A

Td (on/off) @ 25°C

30ns/91ns

Switching Energy

605μJ (on), 896μJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

Pin Count

3

Lead Free

Lead Free

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