Rohm Semiconductor RGW00TS65DHRC11

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Description

Specification

Processor

Manufacturer	Rohm Semiconductor
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247N
Collector- Emitter Voltage VCEO Max	650 V
Current-Collector (Ic) (Max)	96 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±30V
Maximum Operating Temperature	+ 175 C
Mfr	Rohm Semiconductor
Minimum Operating Temperature	– 40 C
Mounting Styles	Through Hole
Package	Tube
Package Type	TO-247N
Pd - Power Dissipation	254 W
Product Status	Active
Test Conditions	400V, 25A, 10Ohm, 15V
Operating Temperature	-40°C ~ 175°C (TJ)
Technology	Si
Pin Count	3
Configuration	Single
Power Dissipation	254W
Input Type	Standard
Power - Max	254 W
Voltage - Collector Emitter Breakdown (Max)	650 V
Channel Type	N
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 50A
Continuous Collector Current	96A
IGBT Type	Trench Field Stop
Gate Charge	141 nC
Current - Collector Pulsed (Icm)	200 A
Td (on/off) @ 25°C	48ns/186ns
Reverse Recovery Time (trr)	90 ns

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SKU: SIGC84T120R3LEX1SA7-9

Manufacturer	Infineon
Base Product Number	SIGC84
Mfr	Infineon Technologies
Package	Bulk
Product Status	Active
Series	TrenchStop™
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200 V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
IGBT Type	Trench Field Stop
Current - Collector Pulsed (Icm)	225 A

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SKU: IKD04N60RFATMA1-9

Manufacturer	Infineon Technologies
Reach Compliance Code	not_compliant
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Current-Collector (Ic) (Max)	8A
Number of Elements	1
SwitchingFrequency	-30kHz
Test Conditions	400V, 4A, 43 Ω, 15V
Operating Temperature	-40°C~175°C TJ
Published	2012
Series	TrenchStop™
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	30W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Mount	Surface Mount
Factory Lead Time	16 Weeks
Max Breakdown Voltage	600V
Turn On Time	18 ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	75W
Transistor Application	POWER CONTROL
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	6A
Reverse Recovery Time	34 ns
Pin Count	3
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 4A
Turn Off Time-Nom (toff)	216 ns
IGBT Type	Trench
Gate Charge	27nC
Current - Collector Pulsed (Icm)	12A
Td (on/off) @ 25°C	12ns/116ns
Switching Energy	60μJ (on), 50μJ (off)
Height	2.41mm
Length	6.73mm
Width	6.22mm
JESD-30 Code	R-PSSO-G2
RoHS Status	ROHS3 Compliant

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Infineon Technologies IKW40N65H5FKSA1

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SKU: IKW40N65H5FKSA1-9

Manufacturer	Infineon Technologies
Packaging	Tube
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Collector-Emitter Breakdown Voltage	650V
Test Conditions	400V, 20A, 15 Ω, 15V
ECCN Code	EAR99
Factory Lead Time	16 Weeks
Published	2008
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Operating Temperature	-40°C~175°C TJ
Terminal Finish	Tin (Sn)
Reverse Recovery Time	62 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 40A
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Element Configuration	Single
Power Dissipation	255W
Input Type	Standard
Collector Emitter Voltage (VCEO)	1.65V
Max Collector Current	74A
Max Power Dissipation	255W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Gate Charge	95nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	22ns/165ns
Switching Energy	390μJ (on), 120μJ (off)
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Infineon Technologies IRG4PC40SPBF

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SKU: IRG4PC40SPBF-9

Manufacturer	Infineon Technologies
Published	2000
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	480V, 31A, 10 Ω, 15V
Turn Off Delay Time	650 ns
Operating Temperature	-55°C~150°C TJ
Power Dissipation	160W
Packaging	Tube
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Voltage - Rated DC	600V
Max Power Dissipation	160W
Terminal Position	SINGLE
Current Rating	60A
Element Configuration	Dual
Mount	Through Hole
Factory Lead Time	14 Weeks
Current - Collector Pulsed (Icm)	120A
Input Type	Standard
Rise Time	18ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.5V
Max Collector Current	60A
JEDEC-95 Code	TO-247AC
Turn On Time	44 ns
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 31A
Turn Off Time-Nom (toff)	1940 ns
Gate Charge	100nC
Td (on/off) @ 25°C	22ns/650ns
Switching Energy	450μJ (on), 6.5mJ (off)
Case Connection	COLLECTOR
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	570ns
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	22 ns
Lead Free	Lead Free

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Infineon Technologies IRG4PC50WPBF

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SKU: IRG4PC50WPBF-9

Manufacturer	Infineon Technologies
Packaging	Bulk
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	480V, 27A, 5 Ω, 15V
Turn Off Delay Time	120 ns
Element Configuration	Dual
Factory Lead Time	14 Weeks
Published	2000
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Voltage - Rated DC	600V
Max Power Dissipation	200W
Terminal Position	SINGLE
Current Rating	55A
Operating Temperature	-55°C~150°C TJ
Power Dissipation	200W
Gate Charge	180nC
Current - Collector Pulsed (Icm)	220A
Turn On Delay Time	46 ns
Transistor Application	POWER CONTROL
Rise Time	33ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.3V
Max Collector Current	55A
JEDEC-95 Code	TO-247AC
Turn On Time	74 ns
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 27A
Turn Off Time-Nom (toff)	272 ns
Case Connection	COLLECTOR
Input Type	Standard
Td (on/off) @ 25°C	46ns/120ns
Switching Energy	80μJ (on), 320μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	86ns
Height	20.2946mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Infineon Technologies IRGP35B60PDPBF

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SKU: IRGP35B60PDPBF-9

Manufacturer	Infineon Technologies
Published	2000
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	390V, 22A, 3.3 Ω, 15V
Turn Off Delay Time	110 ns
Operating Temperature	-55°C~150°C TJ
Case Connection	COLLECTOR
Factory Lead Time	14 Weeks
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Voltage - Rated DC	600V
Max Power Dissipation	308W
Current Rating	60A
Element Configuration	Single
Power Dissipation	308W
Packaging	Bulk
Input Type	Standard
Gate Charge	160nC
Current - Collector Pulsed (Icm)	120A
Rise Time	6ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.55V
Max Collector Current	60A
Reverse Recovery Time	42 ns
JEDEC-95 Code	TO-247AC
Turn On Time	34 ns
Vce(on) (Max) @ Vge, Ic	2.55V @ 15V, 35A
Turn Off Time-Nom (toff)	142 ns
IGBT Type	NPT
Turn On Delay Time	26 ns
Transistor Application	POWER CONTROL
Td (on/off) @ 25°C	26ns/110ns
Switching Energy	220μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Infineon Technologies IRGP4066D-EPBF

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In stock

SKU: IRGP4066D-EPBF-9

Manufacturer	Infineon Technologies
Operating Temperature	-55°C~175°C TJ
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	400V, 75A, 10 Ω, 15V
Input Type	Standard
Factory Lead Time	26 Weeks
Packaging	Tube
Published	2004
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Power Dissipation	454W
Rise Time-Max	90ns
Element Configuration	Single
Case Connection	COLLECTOR
Turn Off Delay Time	200 ns
Turn On Delay Time	50 ns
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	50ns/200ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	140A
Reverse Recovery Time	155 ns
JEDEC-95 Code	TO-247AD
Turn On Time	120 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Turn Off Time-Nom (toff)	310 ns
IGBT Type	Trench
Gate Charge	150nC
Power - Max	454W
Transistor Application	POWER CONTROL
Switching Energy	2.47mJ (on), 2.16mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	80ns
Height	20.7mm
Length	15.87mm
Width	5.13mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor FGL40N120ANDTU

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SKU: FGL40N120ANDTU-9

Manufacturer	ON Semiconductor
Operating Temperature	-55°C~150°C TJ
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	6.756g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	600V, 40A, 5 Ω, 15V
Current Rating	64A
Factory Lead Time	4 Weeks
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	500W
Turn Off Delay Time	110 ns
Element Configuration	Single
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	64A
Turn On Delay Time	15 ns
Transistor Application	POWER CONTROL
Rise Time	20ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	64A
Reverse Recovery Time	112 ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	45 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 40A
Power Dissipation	500W
Input Type	Standard
Turn Off Time-Nom (toff)	165 ns
IGBT Type	NPT
Gate Charge	220nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	15ns/110ns
Switching Energy	2.3mJ (on), 1.1mJ (off)
Height	29mm
Length	20mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor HGTG20N60A4D

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In stock

SKU: HGTG20N60A4D-9

Manufacturer	ON Semiconductor
Published	2011
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	390V, 20A, 3 Ω, 15V
Turn Off Delay Time	73 ns
Operating Temperature	-55°C~150°C TJ
Current Rating	70A
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Voltage - Rated DC	600V
Max Power Dissipation	290W
Mount	Through Hole
Factory Lead Time	4 Weeks
Turn On Time	28 ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	15 ns
Transistor Application	POWER CONTROL
Rise Time	12ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	70A
Reverse Recovery Time	35 ns
Max Breakdown Voltage	600V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 20A
Turn Off Time-Nom (toff)	160 ns
Base Part Number	HGTG20N60
Gate Charge	142nC
Current - Collector Pulsed (Icm)	280A
Td (on/off) @ 25°C	15ns/73ns
Switching Energy	105μJ (on), 150μJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Power Dissipation	290W
Lead Free	Lead Free

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ON Semiconductor HGTG27N120BN

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SKU: HGTG27N120BN-9

Manufacturer	ON Semiconductor
Packaging	Tube
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	960V, 27A, 3 Ω, 15V
Turn Off Delay Time	240 ns
Current Rating	72A
Factory Lead Time	44 Weeks
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	500W
Operating Temperature	-55°C~150°C TJ
Element Configuration	Single
Turn Off Time-Nom (toff)	360 ns
IGBT Type	NPT
Input Type	Standard
Turn On Delay Time	24 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	72A
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	42 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 27A
Continuous Collector Current	72A
Power Dissipation	500W
Case Connection	COLLECTOR
Gate Charge	270nC
Current - Collector Pulsed (Icm)	216A
Td (on/off) @ 25°C	24ns/195ns
Switching Energy	2.2mJ (on), 2.3mJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor HGTG5N120BND

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SKU: HGTG5N120BND-9

Manufacturer	ON Semiconductor
JESD-609 Code	e3
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	960V, 5A, 25 Ω, 15V
Operating Temperature	-55°C~150°C TJ
Element Configuration	Single
Contact Plating	Tin
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	167W
Current Rating	21A
Packaging	Tube
Power Dissipation	167W
Turn Off Time-Nom (toff)	357 ns
IGBT Type	NPT
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	21A
Reverse Recovery Time	65 ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Max Breakdown Voltage	600V
Turn On Time	35 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 5A
Continuous Collector Current	21A
Case Connection	COLLECTOR
Input Type	Standard
Gate Charge	53nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	22ns/160ns
Switching Energy	450μJ (on), 390μJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor NGTB40N120FL2WG

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