Infineon Technologies IRG4PF50WDPBF

SKU: IRG4PF50WDPBF-9

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Manufacturer Part :
IRG4PF50WDPBF
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IRG4PF50WDPBF Datasheet :
IRG4PF50WDPBF

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Power Dissipation

200W

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

900V

Number of Elements

1

Test Conditions

720V, 28A, 5 Ω, 15V

Turn Off Delay Time

150 ns

Operating Temperature

-55°C~150°C TJ

Published

1998

Part Status

Last Time Buy

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

900V

Max Power Dissipation

200W

Terminal Position

SINGLE

Current Rating

51A

Element Configuration

Dual

Mount

Through Hole

Factory Lead Time

14 Weeks

Gate Charge

160nC

Current - Collector Pulsed (Icm)

204A

Transistor Application

POWER CONTROL

Rise Time

52ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

51A

Reverse Recovery Time

90 ns

JEDEC-95 Code

TO-247AC

Turn On Time

121 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 28A

Turn Off Time-Nom (toff)

460 ns

Input Type

Standard

Case Connection

COLLECTOR

Td (on/off) @ 25°C

71ns/150ns

Switching Energy

2.63mJ (on), 1.34mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

20.7mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

71 ns

Lead Free

Lead Free

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