ON Semiconductor FGL60N100BNTD

SKU: FGL60N100BNTD-9

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Manufacturer Part :
FGL60N100BNTD
Manufacturer :
ON Semiconductor
Package :
TO-264-3, TO-264AA
RoHS :
ROHS3 Compliant
FGL60N100BNTD Datasheet :
FGL60N100BNTD

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Published

2017

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Number of Pins

3

Weight

6.756g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

600V, 60A, 51 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Current Rating

60A

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

MATTE TIN

HTS Code

8541.29.00.95

Voltage - Rated DC

1kV

Max Power Dissipation

180W

Mount

Through Hole

Factory Lead Time

4 Weeks

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 60A

Element Configuration

Single

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

320ns

Collector Emitter Voltage (VCEO)

1kV

Max Collector Current

60A

Reverse Recovery Time

1.2 μs

Voltage - Collector Emitter Breakdown (Max)

1000V

Max Breakdown Voltage

1kV

Turn On Time

460 ns

Turn Off Time-Nom (toff)

760 ns

IGBT Type

NPT and Trench

Polarity

NPN

Gate Charge

275nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

140ns/630ns

Height

26mm

Length

20mm

Width

5mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power Dissipation

180W

Lead Free

Lead Free

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