Infineon Technologies IRGP20B60PDPBF

SKU: IRGP20B60PDPBF-9

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Manufacturer Part :
IRGP20B60PDPBF
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
ROHS3 Compliant
IRGP20B60PDPBF Datasheet :
IRGP20B60PDPBF

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 13A, 10 Ω, 15V

Turn Off Delay Time

115 ns

Operating Temperature

-55°C~150°C TJ

Published

2003

Part Status

Last Time Buy

Packaging

Bulk

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

220W

Current Rating

40A

Element Configuration

Single

Power Dissipation

220W

Case Connection

COLLECTOR

Mount

Through Hole

Factory Lead Time

14 Weeks

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

20ns/115ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.8V

Max Collector Current

40A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-247AC

Turn On Time

25 ns

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 20A

Turn Off Time-Nom (toff)

138 ns

IGBT Type

NPT

Gate Charge

68nC

Transistor Application

POWER CONTROL

Turn On Delay Time

20 ns

Switching Energy

95μJ (on), 100μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

17ns

Height

20.3mm

Length

15.9mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

5ns

Lead Free

Lead Free

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