Infineon Technologies IRG4BC40SPBF

SKU: IRG4BC40SPBF-9

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Manufacturer Part :
IRG4BC40SPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
ROHS3 Compliant
IRG4BC40SPBF Datasheet :
IRG4BC40SPBF

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Surface Mount, Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 31A, 10 Ω, 15V

Turn Off Delay Time

650 ns

Case Connection

COLLECTOR

Factory Lead Time

16 Weeks

Published

2000

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

160W

Terminal Position

SINGLE

Element Configuration

Dual

Power Dissipation

160W

Operating Temperature

-55°C~150°C TJ

Input Type

Standard

Td (on/off) @ 25°C

22ns/650ns

Switching Energy

450μJ (on), 6.5mJ (off)

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.5V

Max Collector Current

60A

JEDEC-95 Code

TO-220AB

Turn On Time

44 ns

Vce(on) (Max) @ Vge, Ic

1.5V @ 15V, 31A

Turn Off Time-Nom (toff)

1940 ns

Gate Charge

100nC

Current - Collector Pulsed (Icm)

120A

Turn On Delay Time

22 ns

Transistor Application

POWER CONTROL

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

570ns

Height

16.51mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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