ON Semiconductor FGH25T120SMD-F155

SKU: FGH25T120SMD-F155-9

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Manufacturer Part :
FGH25T120SMD-F155
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
FGH25T120SMD-F155 Datasheet :
FGH25T120SMD-F155

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Peak Reflow Temperature (Cel)

260

Factory Lead Time

5 Weeks

Packaging

Tube

Published

2014

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN

Max Power Dissipation

428W

Test Conditions

600V, 25A, 23 Ω, 15V

Element Configuration

Single

Turn On Time

88 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 25A

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Reverse Recovery Time

60ns

JEDEC-95 Code

TO-247AB

Voltage - Collector Emitter Breakdown (Max)

1200V

Power Dissipation

428W

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

584 ns

IGBT Type

Trench Field Stop

Gate Charge

225nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

40ns/490ns

Switching Energy

1.74mJ (on), 560μJ (off)

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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