ON Semiconductor HGTG18N120BND

SKU: HGTG18N120BND-9

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Manufacturer Part :
HGTG18N120BND
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
HGTG18N120BND Datasheet :
HGTG18N120BND

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 18A, 3 Ω, 15V

Turn Off Delay Time

170 μs

Polarity

NPN

Factory Lead Time

10 Weeks

Published

2011

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

1.2kV

Max Power Dissipation

390W

Current Rating

54A

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

IGBT Type

NPT

Gate Charge

165nC

Turn On Delay Time

23 μs

Transistor Application

MOTOR CONTROL

Rise Time

22ns

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

54A

Reverse Recovery Time

75 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 18A

Turn Off Time-Nom (toff)

345 ns

Power Dissipation

390W

Input Type

Standard

Current - Collector Pulsed (Icm)

160A

Td (on/off) @ 25°C

23ns/170ns

Switching Energy

1.9mJ (on), 1.8mJ (off)

Gate-Emitter Voltage-Max

20V

Fall Time-Max (tf)

200ns

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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