STMicroelectronics STGD5NB120SZT4

SKU: STGD5NB120SZT4-9

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Manufacturer Part :
STGD5NB120SZT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGD5NB120SZT4 Datasheet :
STGD5NB120SZT4

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Description

Specification

Processor

Manufacturer

STMicroelectronics

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

3.949996g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 5A, 1k Ω, 15V

Turn Off Delay Time

12.1 μs

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-30 Code

R-PSSO-G2

Series

PowerMESH™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Voltage - Rated DC

1.2kV

Max Power Dissipation

75W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

5A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STGD5

Pin Count

3

Contact Plating

Tin

Factory Lead Time

8 Weeks

Turn On Time

850 ns

Power Dissipation

55W

Input Type

Standard

Turn On Delay Time

690 ns

Power - Max

75W

Transistor Application

POWER CONTROL

Rise Time

170ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

10A

JEDEC-95 Code

TO-252AA

Voltage - Collector Emitter Breakdown (Max)

1200V

Max Breakdown Voltage

1.2kV

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 5A

Continuous Collector Current

5A

Element Configuration

Single

Turn Off Time-Nom (toff)

14100 ns

Td (on/off) @ 25°C

690ns/12.1μs

Switching Energy

2.59mJ (on), 9mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Height

2.4mm

Length

6.6mm

Width

6.2mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

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