STMicroelectronics STGF10NB60SD

SKU: STGF10NB60SD-9

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Manufacturer Part :
STGF10NB60SD
Manufacturer :
STMicroelectronics
Package :
TO-220-3 Full Pack
RoHS :
ROHS3 Compliant
STGF10NB60SD Datasheet :
STGF10NB60SD

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Part Status

Active

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 10A, 1k Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

PowerMESH™

Case Connection

ISOLATED

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) – annealed

Voltage - Rated DC

600V

Max Power Dissipation

25W

Current Rating

10A

Base Part Number

STGF10

Pin Count

3

Element Configuration

Single

Power Dissipation

25W

Mount

Through Hole

Factory Lead Time

8 Weeks

Turn Off Time-Nom (toff)

3100 ns

Transistor Application

POWER CONTROL

Drain to Source Voltage (Vdss)

600V

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

23A

Reverse Recovery Time

37ns

Continuous Drain Current (ID)

20A

JEDEC-95 Code

TO-220AB

Max Breakdown Voltage

600V

Turn On Time

1160 ns

Vce(on) (Max) @ Vge, Ic

1.75V @ 15V, 10A

Gate Charge

33nC

Current - Collector Pulsed (Icm)

80A

Input Type

Standard

Td (on/off) @ 25°C

700ns/1.2μs

Switching Energy

600μJ (on), 5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Height

20mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

460ns

Lead Free

Lead Free

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