STMicroelectronics STGW30NC60VD

SKU: STGW30NC60VD-9

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Manufacturer Part :
STGW30NC60VD
Manufacturer :
STMicroelectronics
Package :
TO-247-3
RoHS :
ROHS3 Compliant
STGW30NC60VD Datasheet :
STGW30NC60VD

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 20A, 3.3 Ω, 15V

Element Configuration

Single

Factory Lead Time

8 Weeks

Series

PowerMESH™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

250W

Base Part Number

STGW30

Pin Count

3

Operating Temperature

-55°C~150°C TJ

Power Dissipation

250W

Gate Charge

100nC

Current - Collector Pulsed (Icm)

150A

Rise Time

11ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Reverse Recovery Time

44ns

Turn On Time

42.5 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Turn Off Time-Nom (toff)

280 ns

Input Type

Standard

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

31ns/100ns

Switching Energy

220μJ (on), 330μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Height

21.07mm

Length

16.02mm

Width

5.15mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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