Infineon Technologies IRGB4060DPBF

SKU: IRGB4060DPBF-9

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Manufacturer Part :
IRGB4060DPBF
Manufacturer :
Infineon Technologies
Package :
TO-220-3
RoHS :
RoHS Compliant
IRGB4060DPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Turn On Delay Time

39 ns

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.95V

Number of Elements

1

Test Conditions

400V, 8A, 47 Ω, 15V

Turn Off Delay Time

106 ns

Packaging

Tube

Published

2006

Operating Temperature

-55°C~175°C TJ

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Max Power Dissipation

99W

Element Configuration

Single

Power Dissipation

99W

Case Connection

COLLECTOR

Input Type

Standard

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

32A

Td (on/off) @ 25°C

30ns/95ns

Collector Emitter Voltage (VCEO)

1.85V

Max Collector Current

16A

Reverse Recovery Time

60 ns

JEDEC-95 Code

TO-220AB

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 8A

Turn Off Time-Nom (toff)

152 ns

IGBT Type

Trench

Gate Charge

19nC

Rise Time

15ns

Transistor Application

POWER CONTROL

Switching Energy

70μJ (on), 145μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

26ns

Height

9.02mm

Length

10.66mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Polarity/Channel Type

N-CHANNEL

Lead Free

Lead Free

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