STMicroelectronics STGWA30N120KD

SKU: STGWA30N120KD-9

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Manufacturer Part :
STGWA30N120KD
Manufacturer :
STMicroelectronics
Package :
TO-247-3
RoHS :
ROHS3 Compliant
STGWA30N120KD Datasheet :
STGWA30N120KD

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Series

PowerMESH™

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 20A, 10 Ω, 15V

Operating Temperature

-55°C~125°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

220W

Terminal Position

SINGLE

Packaging

Tube

Reach Compliance Code

not_compliant

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

57 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Input Type

Standard

Power - Max

220W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.85V

Max Collector Current

60A

Reverse Recovery Time

84 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STGWA30

Vce(on) (Max) @ Vge, Ic

3.85V @ 15V, 20A

Turn Off Time-Nom (toff)

756 ns

Gate Charge

105nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

36ns/251ns

Switching Energy

2.4mJ (on), 4.3mJ (off)

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

6.5V

RoHS Status

ROHS3 Compliant

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