STMicroelectronics STGP19NC60SD

SKU: STGP19NC60SD-9

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Manufacturer Part :
STGP19NC60SD
Manufacturer :
STMicroelectronics
Package :
TO-220-3
RoHS :
ROHS3 Compliant
STGP19NC60SD Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Element Configuration

Single

Mounting Type

Through Hole

Package / Case

TO-220-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 10 Ω, 15V

Turn Off Delay Time

175 ns

Packaging

Tube

Series

PowerMESH™

Operating Temperature

-55°C~150°C TJ

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

130W

Base Part Number

STGP19

Pin Count

3

JESD-30 Code

R-PSFM-T3

Mount

Through Hole

Factory Lead Time

8 Weeks

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 12A

Turn Off Time-Nom (toff)

535 ns

Power - Max

130W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

31 ns

JEDEC-95 Code

TO-220AB

Turn On Time

23.5 ns

Input Type

Standard

Case Connection

COLLECTOR

Gate Charge

54.5nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

17.5ns/175ns

Switching Energy

135μJ (on), 815μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Turn On Delay Time

17.5 ns

Lead Free

Lead Free

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