Infineon Technologies IKD10N60RAATMA2

SKU: IKD10N60RAATMA2-9

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Manufacturer Part :
IKD10N60RAATMA2
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
IKD10N60RAATMA2 Datasheet :
IKD10N60RAATMA2

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

2014

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 10A, 23 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

17 Weeks

Series

TrenchStop®

Pbfree Code

yes

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

150W

Terminal Form

GULL WING

Packaging

Tape & Reel (TR)

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

20A

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

GENERAL PURPOSE

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Base Part Number

*KD10N60

Reference Standard

AEC-Q101

Reverse Recovery Time

62 ns

Turn On Time

24 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 10A

Turn Off Time-Nom (toff)

428 ns

IGBT Type

Trench

Gate Charge

64nC

Current - Collector Pulsed (Icm)

30A

Td (on/off) @ 25°C

14ns/192ns

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

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