STMicroelectronics STGP30V60DF

SKU: STGP30V60DF-9

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Manufacturer Part :
STGP30V60DF
Manufacturer :
STMicroelectronics
Package :
TO-220-3
RoHS :
ROHS3 Compliant
STGP30V60DF Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Case Connection

COLLECTOR

Operating Temperature

-55°C~175°C TJ

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

258W

Base Part Number

STGP30

Element Configuration

Single

Power Dissipation

258W

Mount

Through Hole

Factory Lead Time

20 Weeks

IGBT Type

Trench Field Stop

Transistor Application

POWER CONTROL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

53ns

JEDEC-95 Code

TO-220AB

Turn On Time

59 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 30A

Turn Off Time-Nom (toff)

225 ns

Gate Charge

163nC

Current - Collector Pulsed (Icm)

120A

Input Type

Standard

Td (on/off) @ 25°C

45ns/189ns

Switching Energy

383μJ (on), 233μJ (off)

Gate-Emitter Voltage-Max

20V

Height

15.75mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

Polarity/Channel Type

N-CHANNEL

RoHS Status

ROHS3 Compliant

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