Infineon Technologies IRG4BH20K-LPBF

SKU: IRG4BH20K-LPBF-9

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Manufacturer Part :
IRG4BH20K-LPBF
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
IRG4BH20K-LPBF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Published

1997

Mount

Through Hole

Mounting Type

Through Hole

Number of Pins

3

Weight

2.084002g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 5A, 50 Ω, 15V

Turn Off Delay Time

93 ns

Operating Temperature

-55°C~150°C TJ

Element Configuration

Dual

Factory Lead Time

13 Weeks

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

1.2kV

Max Power Dissipation

60W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

260

Current Rating

11A

Time@Peak Reflow Temperature-Max (s)

30

Packaging

Tube

Power Dissipation

60W

Gate Charge

28nC

Current - Collector Pulsed (Icm)

22A

Turn On Delay Time

23 ns

Transistor Application

POWER CONTROL

Rise Time

26ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

4.3V

Max Collector Current

11A

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

51 ns

Vce(on) (Max) @ Vge, Ic

4.3V @ 15V, 5A

Turn Off Time-Nom (toff)

720 ns

Case Connection

COLLECTOR

Input Type

Standard

Td (on/off) @ 25°C

23ns/93ns

Switching Energy

450μJ (on), 440μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

400ns

Height

9.65mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Contains Lead, Lead Free

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