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Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Number of Pins |
3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 3A, 10 Ω, 15V |
Turn Off Delay Time |
76 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
20W |
Current Rating |
6A |
Base Part Number |
STGF6 |
Pin Count |
3 |
Packaging |
Tube |
Power Dissipation |
20W |
Turn Off Time-Nom (toff) |
222 ns |
Gate Charge |
13.6nC |
Turn On Delay Time |
12 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
5ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
6A |
Reverse Recovery Time |
21 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
17.3 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 3A |
Continuous Collector Current |
6A |
Case Connection |
ISOLATED |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
21A |
Td (on/off) @ 25°C |
12ns/76ns |
Switching Energy |
20μJ (on), 68μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
9.3mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Reach Compliance Code |
not_compliant |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Current-Collector (Ic) (Max) |
8A |
Number of Elements |
1 |
SwitchingFrequency |
-30kHz |
Test Conditions |
400V, 4A, 43 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Published |
2012 |
Series |
TrenchStop™ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
30W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Surface Mount |
Factory Lead Time |
16 Weeks |
Max Breakdown Voltage |
600V |
Turn On Time |
18 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
75W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
6A |
Reverse Recovery Time |
34 ns |
Pin Count |
3 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 4A |
Turn Off Time-Nom (toff) |
216 ns |
IGBT Type |
Trench |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
12A |
Td (on/off) @ 25°C |
12ns/116ns |
Switching Energy |
60μJ (on), 50μJ (off) |
Height |
2.41mm |
Length |
6.73mm |
Width |
6.22mm |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2001 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 39A, 5 Ω, 15V |
Turn Off Delay Time |
240 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation |
200W |
Packaging |
Tray |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
ULTRA FAST SOFT RECOVERY |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Current Rating |
70A |
Element Configuration |
Single |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Turn Off Time-Nom (toff) |
660 ns |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
25ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.6V |
Max Collector Current |
70A |
Reverse Recovery Time |
50 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
86 ns |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 39A |
Gate Charge |
190nC |
Current - Collector Pulsed (Icm) |
280A |
Case Connection |
COLLECTOR |
Td (on/off) @ 25°C |
55ns/240ns |
Switching Energy |
1.5mJ (on), 2.4mJ (off) |
Fall Time-Max (tf) |
210ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
55 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2004 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 33A, 5 Ω, 15V |
Turn Off Delay Time |
845 ns |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Packaging |
Bulk |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
200W |
Current Rating |
57A |
Element Configuration |
Single |
Power Dissipation |
200W |
Case Connection |
COLLECTOR |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Max Junction Temperature (Tj) |
150°C |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
57A |
Continuous Drain Current (ID) |
57A |
JEDEC-95 Code |
TO-247AC |
Gate to Source Voltage (Vgs) |
30V |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
3.6nF |
Turn On Time |
62 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 33A |
Continuous Collector Current |
57A |
Turn Off Time-Nom (toff) |
2170 ns |
Turn On Delay Time |
32 ns |
Gate Charge |
167nC |
Current - Collector Pulsed (Icm) |
114A |
Td (on/off) @ 25°C |
32ns/845ns |
Switching Energy |
1.8mJ (on), 19.6mJ (off) |
Height |
24.99mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Rise Time |
29ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-274AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 5 Ω, 15V |
Turn Off Delay Time |
245 ns |
Power Dissipation |
350W |
Factory Lead Time |
13 Weeks |
Published |
1999 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
350W |
Current Rating |
85A |
Element Configuration |
Single |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Continuous Collector Current |
85A |
Turn Off Time-Nom (toff) |
503 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
94ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
85A |
Reverse Recovery Time |
82 ns |
Turn On Time |
179 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
Max Junction Temperature (Tj) |
150°C |
Input Type |
Standard |
Turn On Delay Time |
90 ns |
Gate Charge |
340nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
90ns/245ns |
Switching Energy |
3.26mJ (on), 2.27mJ (off) |
Height |
24.8mm |
Length |
16.1mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 75A, 10 Ω, 15V |
Input Type |
Standard |
Factory Lead Time |
26 Weeks |
Packaging |
Tube |
Published |
2004 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
454W |
Rise Time-Max |
90ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Turn Off Delay Time |
200 ns |
Turn On Delay Time |
50 ns |
Current - Collector Pulsed (Icm) |
225A |
Td (on/off) @ 25°C |
50ns/200ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
140A |
Reverse Recovery Time |
155 ns |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
120 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
Turn Off Time-Nom (toff) |
310 ns |
IGBT Type |
Trench |
Gate Charge |
150nC |
Power - Max |
454W |
Transistor Application |
POWER CONTROL |
Switching Energy |
2.47mJ (on), 2.16mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
80ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.13mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2007 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 48A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Input Type |
Standard |
Factory Lead Time |
26 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
330W |
Rise Time-Max |
56ns |
Element Configuration |
Single |
Power Dissipation |
134W |
Packaging |
Tube |
Power - Max |
330W |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Max Collector Current |
100A |
Reverse Recovery Time |
115 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 48A |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
144A |
Td (on/off) @ 25°C |
60ns/145ns |
Switching Energy |
625μJ (on), 1.28mJ (off) |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.9V |
Fall Time-Max (tf) |
46ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.31mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 33A, 3.3 Ω, 15V |
Turn Off Delay Time |
140 ns |
Input Type |
Standard |
Factory Lead Time |
14 Weeks |
Published |
2004 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
370W |
Current Rating |
75A |
Element Configuration |
Single |
Power Dissipation |
370W |
Case Connection |
COLLECTOR |
Operating Temperature |
-55°C~150°C TJ |
Turn On Delay Time |
33 ns |
Gate Charge |
240nC |
Current - Collector Pulsed (Icm) |
150A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
Reverse Recovery Time |
50 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
59 ns |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 50A |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
75A |
Turn Off Time-Nom (toff) |
190 ns |
IGBT Type |
NPT |
Transistor Application |
POWER CONTROL |
Rise Time |
26ns |
Td (on/off) @ 25°C |
34ns/130ns |
Switching Energy |
360μJ (on), 380μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
65ns |
Height |
24.99mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
International Rectifier |
---|---|
Input Type |
Standard |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AD |
Mfr |
International Rectifier |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Power - Max |
325 W |
Current - Collector (Ic) (Max) |
90 A |
Test Condition |
400V, 48A, 10Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 48A |
Gate Charge |
145 nC |
Current - Collector Pulsed (Icm) |
144 A |
Td (on/off) @ 25°C |
70ns/140ns |
Switching Energy |
1.7mJ (on), 1mJ (off) |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2011 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 3 Ω, 15V |
Turn Off Delay Time |
73 ns |
Operating Temperature |
-55°C~150°C TJ |
Current Rating |
70A |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
290W |
Mount |
Through Hole |
Factory Lead Time |
4 Weeks |
Turn On Time |
28 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
15 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
12ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
70A |
Reverse Recovery Time |
35 ns |
Max Breakdown Voltage |
600V |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
Turn Off Time-Nom (toff) |
160 ns |
Base Part Number |
HGTG20N60 |
Gate Charge |
142nC |
Current - Collector Pulsed (Icm) |
280A |
Td (on/off) @ 25°C |
15ns/73ns |
Switching Energy |
105μJ (on), 150μJ (off) |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
290W |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 27A, 3 Ω, 15V |
Turn Off Delay Time |
240 ns |
Current Rating |
72A |
Factory Lead Time |
44 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
500W |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
360 ns |
IGBT Type |
NPT |
Input Type |
Standard |
Turn On Delay Time |
24 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
72A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
42 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 27A |
Continuous Collector Current |
72A |
Power Dissipation |
500W |
Case Connection |
COLLECTOR |
Gate Charge |
270nC |
Current - Collector Pulsed (Icm) |
216A |
Td (on/off) @ 25°C |
24ns/195ns |
Switching Energy |
2.2mJ (on), 2.3mJ (off) |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2012 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
535W |
Pin Count |
3 |
Mount |
Through Hole |
Factory Lead Time |
13 Weeks |
Current - Collector Pulsed (Icm) |
200A |
Power - Max |
535W |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
80A |
Reverse Recovery Time |
240 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
313nC |
Td (on/off) @ 25°C |
116ns/286ns |
Switching Energy |
3.4mJ (on), 1.1mJ (off) |
Input Type |
Standard |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.4mm |
Length |
16.25mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Polarity/Channel Type |
N-CHANNEL |
Lead Free |
Lead Free |
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
118 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Current Rating |
60A |
Base Part Number |
STGW30 |
Pin Count |
3 |
Packaging |
Tube |
Power Dissipation |
200W |
Turn Off Time-Nom (toff) |
189 ns |
Gate Charge |
102nC |
Turn On Delay Time |
29.5 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
12ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Reverse Recovery Time |
40 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
42.5 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Case Connection |
ISOLATED |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
29.5ns/118ns |
Switching Energy |
305μJ (on), 181μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
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