Infineon Technologies IRGS10B60KDTRLP

SKU: IRGS10B60KDTRLP-9

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Manufacturer Part :
IRGS10B60KDTRLP
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
IRGS10B60KDTRLP Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

260.39037mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 10A, 47 Ω, 15V

Time@Peak Reflow Temperature-Max (s)

30

Factory Lead Time

16 Weeks

Published

2004

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Max Power Dissipation

156W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Operating Temperature

-55°C~150°C TJ

Base Part Number

IRGS10B60KDPBF

Max Breakdown Voltage

600V

Turn On Time

50 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

156W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

22A

Reverse Recovery Time

90 ns

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 10A

Turn Off Time-Nom (toff)

276 ns

IGBT Type

NPT

Gate Charge

38nC

Current - Collector Pulsed (Icm)

44A

Td (on/off) @ 25°C

30ns/230ns

Switching Energy

140μJ (on), 250μJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

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