STMicroelectronics STGP7NB60KD

SKU: STGP7NB60KD-9

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Manufacturer Part :
STGP7NB60KD
Manufacturer :
STMicroelectronics
Package :
TO-220-3
RoHS :
ROHS3 Compliant
STGP7NB60KD Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Part Status

Obsolete

Package / Case

TO-220-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 7A, 10 Ω, 15V

Operating Temperature

150°C TJ

Packaging

Tube

Series

PowerMESH™

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

600V

Max Power Dissipation

80W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Current Rating

7A

Mounting Type

Through Hole

Mount

Through Hole

Reverse Recovery Time

50ns

Pin Count

3

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

80W

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

14A

JEDEC-95 Code

TO-220AB

Turn On Time

21 ns

Base Part Number

STGP7

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 7A

Turn Off Time-Nom (toff)

202 ns

Gate Charge

32.7nC

Current - Collector Pulsed (Icm)

56A

Td (on/off) @ 25°C

15ns/50ns

Switching Energy

140μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7V

JESD-30 Code

R-PSFM-T3

RoHS Status

ROHS3 Compliant

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