STMicroelectronics STGB3NB60FDT4

SKU: STGB3NB60FDT4-9

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Manufacturer Part :
STGB3NB60FDT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
Non-RoHS Compliant
STGB3NB60FDT4 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Part Status

Obsolete

Mounting Type

Surface Mount

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 3A, 10 Ω, 15V

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerMESH™

Base Part Number

STGB3

Mount

Surface Mount

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

TIN LEAD

Voltage - Rated DC

600V

Max Power Dissipation

68W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Current Rating

3A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-609 Code

e0

Pin Count

3

Reverse Recovery Time

45ns

Max Breakdown Voltage

600V

Element Configuration

Single

Power Dissipation

68W

Input Type

Standard

Transistor Application

MOTOR CONTROL

Rise Time

60ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

6A

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Turn On Time

16.5 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 3A

Turn Off Time-Nom (toff)

535 ns

Gate Charge

16nC

Current - Collector Pulsed (Icm)

24A

Td (on/off) @ 25°C

12.5ns/105ns

Switching Energy

125μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

RoHS Status

Non-RoHS Compliant

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