Infineon Technologies IGB30N60H3ATMA1

SKU: IGB30N60H3ATMA1-9

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Manufacturer Part :
IGB30N60H3ATMA1
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
IGB30N60H3ATMA1 Datasheet :
IGB30N60H3ATMA1

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

60A

Number of Elements

1

Test Conditions

400V, 30A, 10.5 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Packaging

Tape & Reel (TR)

Series

TrenchStop®

JESD-609 Code

e3

Published

2005

Pbfree Code

no

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

SINGLE

Terminal Form

GULL WING

Mounting Type

Surface Mount

Factory Lead Time

16 Weeks

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

600V

Pin Count

4

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

187W

Transistor Application

POWER CONTROL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Turn Off Time-Nom (toff)

262 ns

IGBT Type

Trench Field Stop

Gate Charge

165nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

18ns/207ns

Switching Energy

1.17mJ

Base Part Number

GB30N60

RoHS Status

ROHS3 Compliant

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