GeneSiC Semiconductor GA35XCP12-247

SKU: GA35XCP12-247-9

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Manufacturer Part :
GA35XCP12-247
Manufacturer :
GeneSiC Semiconductor
Package :
TO-247-3
RoHS :
RoHS Compliant
GA35XCP12-247 Datasheet :

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Description

Specification

Processor

Manufacturer

GeneSiC Semiconductor

Factory Lead Time

18 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

800V, 35A, 22 Ω, 15V

Operating Temperature

-40°C~150°C TJ

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Input Type

Standard

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3V

Reverse Recovery Time

36 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 35A

IGBT Type

PT

Gate Charge

50nC

Current - Collector Pulsed (Icm)

35A

Switching Energy

2.66mJ (on), 4.35mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

RoHS Status

RoHS Compliant

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