Microsemi Corporation APT35GN120BG

SKU: APT35GN120BG-9

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Manufacturer Part :
APT35GN120BG
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT35GN120BG Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

800V, 35A, 2.2 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

1999

Pin Count

3

JESD-609 Code

e1

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

HIGH RELIABILITY

Voltage - Rated DC

1.2kV

Max Power Dissipation

379W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Current Rating

94A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

24 Weeks

Continuous Collector Current

94A

Qualification Status

Not Qualified

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

94A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

46 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 35A

Turn Off Time-Nom (toff)

465 ns

IGBT Type

NPT, Trench Field Stop

JESD-30 Code

R-PSFM-T3

Gate Charge

220nC

Current - Collector Pulsed (Icm)

105A

Td (on/off) @ 25°C

24ns/300ns

Switching Energy

2.315mJ (off)

Gate-Emitter Voltage-Max

30V

Gate-Emitter Thr Voltage-Max

6.5V

Height

5.31mm

Length

21.46mm

Width

16.26mm

RoHS Status

RoHS Compliant

Element Configuration

Single

Lead Free

Lead Free

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