Microsemi Corporation APT25GN120BG

SKU: APT25GN120BG-9

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Manufacturer Part :
APT25GN120BG
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT25GN120BG Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Published

1999

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

800V, 25A, 1 Ω, 15V

Turn Off Delay Time

280 ns

Operating Temperature

-55°C~150°C TJ

Current Rating

67A

Factory Lead Time

24 Weeks

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

HIGH RELIABILITY

Voltage - Rated DC

1.2kV

Max Power Dissipation

272W

Packaging

Tube

Pin Count

3

Turn On Time

39 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 25A

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

22 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

67A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

JESD-30 Code

R-PSFM-T3

Element Configuration

Single

Turn Off Time-Nom (toff)

560 ns

IGBT Type

Trench Field Stop

Gate Charge

155nC

Current - Collector Pulsed (Icm)

75A

Td (on/off) @ 25°C

22ns/280ns

Switching Energy

2.15μJ (off)

Gate-Emitter Voltage-Max

30V

Gate-Emitter Thr Voltage-Max

6.5V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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