STMicroelectronics STGB20NB32LZ

SKU: STGB20NB32LZ-9

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Manufacturer Part :
STGB20NB32LZ
Manufacturer :
STMicroelectronics
Package :
RoHS :
Non-RoHS Compliant
STGB20NB32LZ Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

JESD-609 Code

e3

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

375V

Number of Elements

1

Test Conditions

250V, 20A, 1k Ω, 4.5V

Operating Temperature

175°C TJ

Packaging

Tube

Current Rating

20A

Mount

Surface Mount

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

2V

Max Power Dissipation

150W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Series

PowerMESH™

Time@Peak Reflow Temperature-Max (s)

30

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

40A

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

AUTOMOTIVE IGNITION

Rise Time

600ns

Polarity/Channel Type

N-CHANNEL

Base Part Number

STGB20

Pin Count

3

Turn On Time

2900 ns

Vce(on) (Max) @ Vge, Ic

2V @ 4.5V, 20A

Turn Off Time-Nom (toff)

15900 ns

Gate Charge

51nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

2.3μs/11.5μs

Switching Energy

11.8mJ (off)

Gate-Emitter Thr Voltage-Max

2V

Radiation Hardening

No

RoHS Status

Non-RoHS Compliant

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