Infineon Technologies IKD10N60R

SKU: IKD10N60R-9

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Manufacturer Part :
IKD10N60R
Manufacturer :
Infineon Technologies
Package :
RoHS :
RoHS Compliant
IKD10N60R Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Pbfree Code

yes

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

20A

Number of Elements

1

Test Conditions

400V, 10A, 23 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Packaging

Cut Tape (CT)

Published

2011

Series

TrenchStop®

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Surface Mount

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

JESD-609 Code

e3

Base Part Number

*KD10N60

Power Dissipation-Max (Abs)

150W

Turn On Time

24 ns

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

62ns

Voltage - Collector Emitter Breakdown (Max)

600V

Pin Count

3

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 10A

Turn Off Time-Nom (toff)

428 ns

IGBT Type

Trench

Gate Charge

64nC

Current - Collector Pulsed (Icm)

30A

Td (on/off) @ 25°C

14ns/192ns

Switching Energy

590μJ

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.7V

RoHS Status

RoHS Compliant

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