IXYS IXGH10N100U1

SKU: IXGH10N100U1-9

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Manufacturer Part :
IXGH10N100U1
Manufacturer :
IXYS
Package :
TO-247-3
RoHS :
RoHS Compliant
IXGH10N100U1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Qualification Status

Not Qualified

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Test Conditions

800V, 10A, 150 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Published

1997

Number of Terminations

3

Voltage - Rated DC

1kV

Max Power Dissipation

100W

Terminal Position

SINGLE

Current Rating

20A

Base Part Number

IXG*10N100

JESD-30 Code

R-PSFM-T3

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

300 ns

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 10A

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.5V

Max Collector Current

20A

Reverse Recovery Time

60ns

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1000V

Case Connection

COLLECTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Time-Nom (toff)

1850 ns

Gate Charge

52nC

Current - Collector Pulsed (Icm)

40A

Td (on/off) @ 25°C

100ns/550ns

Switching Energy

2mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Input Type

Standard

RoHS Status

RoHS Compliant

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