Microsemi Corporation APT35GA90B

SKU: APT35GA90B-9

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Manufacturer Part :
APT35GA90B
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT35GA90B Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Max Power Dissipation

290W

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

900V

Number of Elements

1

Test Conditions

600V, 18A, 10 Ω, 15V

Packaging

Tube

Series

POWER MOS 8™

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN SILVER COPPER

Additional Feature

LOW CONDUCTION LOSS

Mount

Through Hole

Factory Lead Time

32 Weeks

Turn On Time

25 ns

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 18A

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

290W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

900V

Max Collector Current

63A

JESD-30 Code

R-PSFM-T3

Pin Count

3

Turn Off Time-Nom (toff)

298 ns

IGBT Type

PT

Gate Charge

84nC

Current - Collector Pulsed (Icm)

105A

Td (on/off) @ 25°C

12ns/104ns

Switching Energy

642μJ (on), 382μJ (off)

Radiation Hardening

No

Element Configuration

Single

RoHS Status

RoHS Compliant

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