Microsemi Corporation APT20GN60BDQ1G

SKU: APT20GN60BDQ1G-9

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Manufacturer Part :
APT20GN60BDQ1G
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT20GN60BDQ1G Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 20A, 4.3 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Pin Count

3

Published

1999

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN SILVER COPPER

Voltage - Rated DC

600V

Max Power Dissipation

136W

Current Rating

40A

Mount

Through Hole

Factory Lead Time

25 Weeks

Turn Off Time-Nom (toff)

290 ns

Element Configuration

Single

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Turn On Time

19 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 20A

IGBT Type

Trench Field Stop

Gate Charge

120nC

JESD-30 Code

R-PSFM-T3

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

9ns/140ns

Switching Energy

230μJ (on), 580μJ (off)

Gate-Emitter Voltage-Max

30V

Gate-Emitter Thr Voltage-Max

6.5V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

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