Microsemi Corporation APT54GA60BD30

SKU: APT54GA60BD30-9

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Manufacturer Part :
APT54GA60BD30
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT54GA60BD30 Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Pbfree Code

yes

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 32A, 4.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

JESD-30 Code

R-PSFM-T3

Published

1999

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Pure Matte Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

416W

Pin Count

3

Mount

Through Hole

Factory Lead Time

33 Weeks

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 32A

Case Connection

COLLECTOR

Power - Max

416W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

96A

JEDEC-95 Code

TO-247AD

Turn On Time

37 ns

Turn Off Time-Nom (toff)

291 ns

IGBT Type

PT

Element Configuration

Single

Gate Charge

28nC

Current - Collector Pulsed (Icm)

161A

Td (on/off) @ 25°C

17ns/112ns

Switching Energy

534μJ (on), 466μJ (off)

Gate-Emitter Voltage-Max

30V

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

Input Type

Standard

RoHS Status

RoHS Compliant

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