Microsemi Corporation APT11GP60BDQBG

SKU: APT11GP60BDQBG-9

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Manufacturer Part :
APT11GP60BDQBG
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT11GP60BDQBG Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

JESD-609 Code

e1

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Number of Elements

1

Test Conditions

400V, 11A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2012

Current Rating

41A

Mount

Through Hole

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN SILVER COPPER

Voltage - Rated DC

600V

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Series

POWER MOS 7®

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

16 ns

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

187W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-247AD

Pin Count

3

JESD-30 Code

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 11A

Turn Off Time-Nom (toff)

150 ns

IGBT Type

PT

Gate Charge

40nC

Current - Collector Pulsed (Icm)

45A

Td (on/off) @ 25°C

7ns/29ns

Switching Energy

46μJ (on), 90μJ (off)

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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