Microchip APT30GS60BRDQ2G

SKU: APT30GS60BRDQ2G-9

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Manufacturer Part :
APT30GS60BRDQ2G
Manufacturer :
Microchip
Package :
TO-247-3
RoHS :
APT30GS60BRDQ2G Datasheet :
APT30GS60BRDQ2G

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Description

Specification

Processor

Manufacturer

Microchip

Min Operating Temperature

-55 °C

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

Mounting Style

Through Hole

Base Product Number

APT30GS60

Brand

Microchip Technology / Atmel

Collector- Emitter Voltage VCEO Max

600 V

Factory Pack Quantity:Factory Pack Quantity

1

Maximum Gate Emitter Voltage

– 30 V, + 30 V

Mfr

Microchip Technology

Minimum Operating Temperature

– 55 C

Maximum Operating Temperature

+ 150 C

Package

Tube

Pd - Power Dissipation

250 W

Product Status

Active

Unit Weight

0.208116 oz

Operating Temperature

-55°C ~ 150°C (TJ)

Packaging

Tube

Series

*

Part Status

Active

Max Operating Temperature

150 °C

Mounting Type

Through Hole

Mount

Through Hole

Voltage - Collector Emitter Breakdown (Max)

600 V

Current - Collector (Ic) (Max)

54 A

Configuration

Single

Element Configuration

Single

Input Type

Standard

Power - Max

250 W

Product Type

IGBT Transistors

Collector Emitter Voltage (VCEO)

600 V

Max Collector Current

54 A

Reverse Recovery Time

25 ns

Collector Emitter Breakdown Voltage

600 V

Max Power Dissipation

250 W

Subcategory

IGBTs

Test Condition

400V, 30A, 9.1Ohm, 15V

Vce(on) (Max) @ Vge, Ic

3.15V @ 15V, 30A

IGBT Type

NPT

Gate Charge

145 nC

Current - Collector Pulsed (Icm)

113 A

Td (on/off) @ 25°C

16ns/360ns

Switching Energy

570µJ (off)

Reverse Recovery Time (trr)

25 ns

Product Category

IGBT Transistors

Technology

Si

Radiation Hardening

No

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