Rohm Semiconductor RGW50TK65GVC11

SKU: RGW50TK65GVC11-9

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Manufacturer Part :
RGW50TK65GVC11
Manufacturer :
Rohm Semiconductor
Package :
TO-3PFM, SC-93-3
RoHS :
RGW50TK65GVC11 Datasheet :
RGW50TK65GVC11

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Maximum Operating Temperature

+ 175 C

Supplier Device Package

TO-3PFM

Brand

ROHM Semiconductor

Collector Current (DC)

18(A)

Collector- Emitter Voltage VCEO Max

650 V

Continuous Collector Current Ic Max

18 A

Current-Collector (Ic) (Max)

30 A

Factory Pack QuantityFactory Pack Quantity

30

Product Status

Active

Maximum Gate Emitter Voltage

– 30 V, + 30 V

Mfr

Rohm Semiconductor

Minimum Operating Temperature

– 40 C

Mounting

Through Hole

Mounting Styles

Through Hole

MSL

MSL 1 – Unlimited

Package

Tube

Package Type

TO-3PFM

Pd - Power Dissipation

67 W

Package / Case

TO-3PFM, SC-93-3

Mounting Type

Through Hole

Power - Max

67 W

Test Conditions

400V, 25A, 10Ohm, 15V

Packaging

Tube

Subcategory

IGBTs

Technology

Si

Pin Count

3 +Tab

Configuration

Single

Power Dissipation

67W

Input Type

Standard

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Rad Hardened

No

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 25A

Continuous Collector Current

30A

IGBT Type

Trench Field Stop

Gate Charge

73 nC

Current - Collector Pulsed (Icm)

100 A

Td (on/off) @ 25°C

35ns/102ns

Switching Energy

390μJ (on), 430μJ (off)

Operating Temperature

-40°C ~ 175°C (TJ)

Product Category

IGBT Transistors

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