IXYS IXGP16N60B2D1

SKU: IXGP16N60B2D1-9

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Manufacturer Part :
IXGP16N60B2D1
Manufacturer :
IXYS
Package :
TO-220-3
RoHS :
RoHS Compliant
IXGP16N60B2D1 Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Series

HiPerFAST™

Package / Case

TO-220-3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 12A, 22 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Pin Count

3

Published

2010

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Pure Tin (Sn)

Max Power Dissipation

150W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

IXG*16N60

Mounting Type

Through Hole

Mount

Through Hole

JEDEC-95 Code

TO-220AB

Qualification Status

Not Qualified

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

150W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

30ns

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 12A

JESD-30 Code

R-PSFM-T3

Turn Off Time-Nom (toff)

280 ns

IGBT Type

PT

Gate Charge

24nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

18ns/73ns

Switching Energy

160μJ (on), 120μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Element Configuration

Single

RoHS Status

RoHS Compliant

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