Infineon Technologies IRG7CH30K10EF

SKU: IRG7CH30K10EF-9

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Manufacturer Part :
IRG7CH30K10EF
Manufacturer :
Infineon Technologies
Package :
Die
RoHS :
ROHS3 Compliant
IRG7CH30K10EF Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Test Conditions

600V, 10A, 22 Ω, 15V

ECCN Code

EAR99

Number of Terminations

2

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

Published

2013

Packaging

Bulk

Terminal Position

UPPER

Operating Temperature

-40°C~175°C TJ

Number of Elements

1

Current-Collector (Ic) (Max)

10A

Transistor Element Material

SILICON

Surface Mount

YES

Package / Case

Die

Mounting Type

Surface Mount

Factory Lead Time

16 Weeks

JESD-30 Code

R-XUUC-N2

Turn Off Time-Nom (toff)

311 ns

Gate-Emitter Thr Voltage-Max

7.5V

VCEsat-Max

2.2 V

Gate-Emitter Voltage-Max

30V

Td (on/off) @ 25°C

10ns/90ns

Gate Charge

4.8nC

IGBT Type

Trench

Vce(on) (Max) @ Vge, Ic

2.56V @ 15V, 10A

Terminal Form

NO LEAD

Turn On Time

38.5 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Polarity/Channel Type

N-CHANNEL

Transistor Application

POWER CONTROL

Input Type

Standard

Configuration

SINGLE

RoHS Status

ROHS3 Compliant

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