IXYS FIO50-12BD

SKU: FIO50-12BD-9

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Manufacturer Part :
FIO50-12BD
Manufacturer :
IXYS
Package :
i4-Pac™-5
RoHS :
RoHS Compliant
FIO50-12BD Datasheet :

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Description

Specification

Processor

Manufacturer

IXYS

Published

2004

Mounting Type

Through Hole

Package / Case

i4-Pac™-5

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 30A, 39 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

JESD-609 Code

e1

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature

UL RECOGNIZED

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

Pin Count

5

Max Collector Current

50A

Reverse Recovery Time

150ns

Element Configuration

Single

Case Connection

ISOLATED

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.6V

JESD-30 Code

R-PSIP-T5

Qualification Status

Not Qualified

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

135 ns

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 30A

Turn Off Time-Nom (toff)

490 ns

IGBT Type

NPT

Gate Charge

150nC

Switching Energy

4.6mJ (on), 2.2mJ (off)

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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