Microsemi Corporation APT44GA60B

SKU: APT44GA60B-9

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Manufacturer Part :
APT44GA60B
Manufacturer :
Microsemi Corporation
Package :
TO-247-3
RoHS :
RoHS Compliant
APT44GA60B Datasheet :

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Description

Specification

Processor

Manufacturer

Microsemi Corporation

Published

1999

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 26A, 4.7 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Max Power Dissipation

337W

Factory Lead Time

22 Weeks

Series

POWER MOS 8™

JESD-609 Code

e1

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN SILVER COPPER

Additional Feature

LOW CONDUCTION LOSS

Packaging

Tube

Pin Count

3

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 26A

Turn Off Time-Nom (toff)

208 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

337W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

78A

Turn On Time

29 ns

JESD-30 Code

R-PSFM-T3

Element Configuration

Single

IGBT Type

PT

Gate Charge

128nC

Current - Collector Pulsed (Icm)

130A

Td (on/off) @ 25°C

16ns/84ns

Switching Energy

409μJ (on), 258μJ (off)

Gate-Emitter Voltage-Max

30V

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

RoHS Status

RoHS Compliant

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